sangdest microelectronics technical data green products data sheet n1674, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 303DMQ600 303DMQ600 ultrafast rectifier applications: high current switching power supply plating power supply free-wheeling diodes reverse battery protection converters ups system welding features: ? 175 t j operation ? center tap module ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? this is a pb ? free device ? all smc parts are traceable to the wafer lot ? additional testing can be offered upon request mechanical dimensions: in mm/inches prm4 (isolated) marking,molding resin marking for 303DMQ600, 1 st row ss yywwl, 2 nd row303DMQ600 where yy is the manufacture year ww is the manufacture week code l is the wafer?s lot number molding resin epoxy resin ul:94v-0
sangdest microelectronics technical data green products data sheet n1674, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 303DMQ600 maximum ratings: characteristics symbol condition max. units peak inverse voltage v rwm - 600(303DMQ600) v max. average forward current i f(av) 50% duty cycle @t c =117c, rectangular wave form 150(per leg) 300(per device) a peak one cycle non- repetitive surge current i fsm 8.3 ms, half sine pulse 3000 a non-repetitive avalanche energy(per leg) e as t j =25 c,i as =1a,l=30mh 15 mj repetitive avalanche current (per leg) i ar current decaying linearly to zero in 1 sec frequency limited by t j max.v a =1.5x v r typical 1 a electrical characteristics: characteristics symbol condition max. units forward voltage drop v f1 @ 150a, pulse, t j = 25 c @ 300 a, pulse, t j = 25 c 1.40 1.68 v v f2 @ 150a, pulse, t j = 125 c @ 300 a, pulse, t j = 125 c 1.20 1.38 v reverse current i r1 @v r = rated vr t j = 25 c 0.1 ma i r2 @v r = rated vr t j = 125 c 20 ma junction capacitance c t @v r = 5v, t c = 25 c f sig = 1mhz 4150 pf typical series inductance l s measured lead to lead 5 mm from package body 6.0 nh max. voltage rate ofchange dv/dt - 10,000 v/ s * pulse width < 300s, duty cycle <2% thermal-mechanical specifications: characteristics symbol condition specification units junction temperature t j - -55 to +175 c storage temperature t stg - -55 to +175 c maximum thermal resistance junction to case (per leg) r jc dc operation 0.50 c/w maximum thermal resistance junction to case (per package) r jc dc operation 0.25 c/w maximum thermal resistance, case to heat sink r cs mounting surface, smooth and greased 0.10 c/w approximate weight wt - 79 g mounting torque t m non-iubricatedthreads mounting torque 24 (min) 35 (max) kg-cm terminal torque 35(min) 46 (max) case style prm4 isolated
sangdest microelectronics technical data green products data sheet n1674, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sangdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 303DMQ600 disclaimer: 1- the information given herein, including the specifications and dimensions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchasers are advised to c ontact the smc - sangdest microelectronics (nanjing) co., ltd sale s department for the latest version of the datasheet(s). 2- in cases where extremely high reliability is required (suc h as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensur ed by using semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement . 3- in no event shall smc - sangdest microelectronics (nanjing) co., ltd be liable for any damages that may result from an accid ent or any other cause during operation of the user?s units according to the datasheet(s). smc - sangdest microelectronics (nanjing) c o., ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or smc - sangdest microelectr onics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permissio n of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations..
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